On recoil implantation of materials
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On recoil implantation of materials a theoretical study and novel technological realization. by George Fischer

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Published by University of Salford in Salford .
Written in English


Book details:

Edition Notes

PhD thesis, Electrical Engineering.

SeriesD28634/79
ID Numbers
Open LibraryOL20905129M

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Ion implantation has been used to significantly improve the adhesion between a polymer coating (plasma deposited polymethane) and a metal (platinum). Both direct implantation of 10 15 carbon ions per cm 2 and recoil implantation of argon ions into a pre-deposited thin polymer film improved the adhesion. These results are interpreted to indicate Cited by: 2. Ion implantation has been used to significantly improve the adhesion between a polymer coating (plasma deposited polymethane) and a metal (platinum). Both direct implantation of 10 15 carbon ions per cm 2 and recoil implantation of argon ions into a pre-deposited thin polymer film improved the adhesion. These results are interpreted to indicate. Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi­ gations {1} concerned with semiconductor materials as a. However, ion implantation has been proven in recent studies as a reliable technique to tune the properties of bulk materials, thin films, nanostructure materials and biocompatible materials for specific applications [1–4]. Nevertheless, material properties can be altered as per proper selection of ion species, ion energy, substrate Author: Ishaq Ahmad, Waheed Akram.

Atomic Layer Deposition of Dopants for Recoil Implantation in finFET Sidewalls This chapter looks in some detail at the methods and process issues for dopant and materials modification. Cascade mixing and recoil implantation are the most well-known factors limiting depth resolution, giving rise to broadening of buried features and interfaces. Out of the two processes it has been suggested that cascade mixing is the dominant material transport process accompanying sputtering [7–9]. Here we collect and discuss recent low-temperature (T Cited by: 2.   The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials Pages:

Ion Implantation: Equipment and Techniques Book Subtitle Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, L. Shao, Chapter 14 “Application of Ion Implantation Techniques in CMOS fabrication” in Ion Implantation and Synthesis of Materials by M. Nastasi and J. W. Mayer, Springer, PATENTS. US Patent (issued), “Semiconductor wafer with ultra thin doping level formed by defect engineering”, Wei-Kan Chu, L. Shao, X. Lu, and J. Liu. ISBN: OCLC Number: Notes: "Proceedings of the NATO Advanced Study Institute on Surface Engineering, Les Arcs, France, July 3-J "- . Get this from a library! Ion Implantation in Diamond, Graphite and Related Materials. [M S Dresselhaus; R Kalish] -- This book comprehensively reviews the current status of research involving ion implantation of diamond, graphite and related carbon-based materials. The major part of the discussion is devoted to.